9 results
Thermally-Stable High Effective Work Function TaCN and Ta2N Films for pMOS Metal Gate Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1073 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1073-H01-08
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- 2008
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Physical characterization of HfO2deposited on Ge substrates by MOCVD.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 811 / 2004
- Published online by Cambridge University Press:
- 28 July 2011, D5.4/B5.4
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- 2004
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Physical characterization of HfO2 deposited on Ge substrates by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 809 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, B5.4.1/D5.4
- Print publication:
- 2004
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On the Nature of Weak Spots in High-k Layers Submitted to Anneals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 811 / 2004
- Published online by Cambridge University Press:
- 28 July 2011, D6.10
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- 2004
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Scalability of MOCVD-deposited Hafnium Oxide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 765 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D2.7
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- 2003
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High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies
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- Journal:
- MRS Online Proceedings Library Archive / Volume 765 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D2.6
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- 2003
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Physcial characterization of ultrathin high k dielectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 745 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, N2.2
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- 2002
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ALD HfO2 surface preparation study
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- Journal:
- MRS Online Proceedings Library Archive / Volume 745 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, N5.11
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- 2002
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Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 745 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, N5.15
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- 2002
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